4H-SiC bulk crystals were grown controllably by means of a modified Lely method. Homoepitaxial growth of 4H-SiC was carried out by vapor phase epitaxy utilizing step-controlled epitaxy on 4H-SiC substrates prepared by the modified Lely method. The physical properties (electrical and optical properties) of 4H-SiC epilayers were characterized by Hall effects and photoluminescence (PL) measurements. The electron mobilities as high as 720 cm2/V s at 292 K, and 11 000 cm2/V s at 77 K were obtained. In the PL measurement, the epilayers with a thickness more than 20 μm showed luminescence attributed to free exciton recombination, which indicates the improvement of crystal quality by step-controlled epitaxy.
An intra-panel interface for large size and high refresh rate panel is proposed. A source synchronous clocking with a new calibration scheme enables data skew adjustment while eliminating sensitive analog circuits in source driver. 2Gbps operation required for a 80-inch 4K2K panel with the 8-bit RGB and 240Hz driving is verified.
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