This study investigates whether the transformation-induced plasticity (TRIP) of metastable retained austenite, and a finely dispersed MA-like phase (narrow-lath martensite-retained austenite complex phase), produced by the addition 1.5%Si or 1.5% Si-1.0%Cr (mass%) can improve the cold formability of 22MnB martensitic sheet steel. The best combination of tensile strength and formability was achieved with 22SiMnCrB steel that was subjected to isothermal transformation at a temperature between 25 and 250 °C after austenitizing. This optimal combination is attributed to strain-induced transformation of metastable retained austenite in the MA-like phase, which subsequently leads to plastic relaxation of localized stress concentrations.
We demonstrated the negative differential resistance (NDR) characteristics in CaF 2 /Si double barrier resonant tunneling diodes (DBRTDs) which have mesa structure isolated by the plasma etching process using CF 4 /O 2 plasma. Clear NDR characteristics with a peak to valley current ratio of 79 and a current density of 1-10 kA cm −2 was obtained from a CaF 2 /Si DBRTD mesa-isolated using CF 4 /O 2 plasma etching at room temperature. Furthermore, any degradation of performance of the DBRTD caused by dry etching has not been observed. The NDR characteristics were reasonably reproduced by theoretical analysis based on a ballistic transport model. These results implied that the plasma etching process using CF 4 /O 2 enables CaF 2 /Si heterostructure devices to be implemented into the Si-based integrated circuit technology.
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