We detected a very low density of electronic states in the band gap of a nondoped pentacene thin film by using ultraviolet photoelectron spectroscopy with ultrahigh sensitivity and ultralow background. The gap states, which may originate from the highest occupied molecular orbital (HOMO) state in imperfect molecular packing regions, are distributed exponentially up to the Fermi level and control the Fermi level relative to the HOMO band.
Highly efficient and stable, red phosphorescent organic light‐emitting diodes (OLEDs) are demonstrated using platinum complexes. The host/dopant combination is a crucial factor in obtaining high efficiency and stability. The OLEDs exhibit a maximum external quantum efficiency of about 20% and an expected half‐life of about 10 000 h with an initial luminance of 1000 cd m−2.
The effect of the molecular orientation on the molecular electronic structure is studied on the Cu-phthalocyanine∕graphite system via film thickness dependences of metastable-atom electron spectra and ultraviolet photoelectron spectra. We observed a decrease in the vacuum-level position and a corresponding band-bending-like shift in the highest occupied state only for thick films where the molecular tilt angle increases gradually with the film thickness. These shifts are explained by electric dipoles produced in the film by a gradient of the intermolecular electronic interaction along the surface normal due to the continuous increase in the molecular tilt angle. The result indicates that the change in the molecular orientation is an important origin of the band-bending-like shift in the molecular electronic states even if the molecule has no permanent electric dipole.
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