Diffusion of In atoms was observed in InGaN ultra-thin films (3 nm thickness), which were prepared by radio-frequency induced nitrogen plasma source MBE (RF-MBE) and subsequent thermal annealing, using high-resolution Rutherford backscattering spectrometry (HRBS). To suppress decomposition of In atoms, cap-GaN layer was grown onto InGaN film. In-related signal clearly appeared in the HRBS spectra after post-growth thermal annealing at 875 °C for 10 min. The thickness of InGaN layer with post-growth thermal annealing increased comparing with that before annealing; On the contrary, the thickness of the cap-GaN layer decreased. This result indicates that diffusion of In atoms occurred at GaN/InGaN interface. The diffusion coefficient is estimated to be approximately 3.8 × 10 -18 cm 2 /s.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.