Thermal conductivity of a 300-nm-thick VO 2 thin film and its temperature dependence across the metal-insulator phase transition (T MIT ) were studied using a pulsed light heating thermoreflectance technique. The VO 2 and Mo/VO 2 /Mo films with a VO 2 thickness of 300 nm were prepared on quartz glass substrates: the former was used for the characterization of electrical properties, and the latter was used for the thermal conductivity measurement. The VO 2 films were deposited by reactive rf magnetron sputtering using a V 2 O 3 target and an Ar-O 2 mixture gas at 645 K. The VO 2 films consisted of single phase VO 2 as confirmed by X-ray diffraction and electron beam diffraction. With increased temperature, the electrical resistivity of the VO 2 film decreased abruptly from 6.3 ' 10 %1 to 5.3 ' 10 %4 Ω cm across the T MIT of around 325-340 K. The thermal conductivity of the VO 2 film increased from 3.6 to 5.4 W m %1 K %1 across the T MIT . This discontinuity and temperature dependence of thermal conductivity can be explained by the phonon heat conduction and the Wiedemann-Franz law.
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