Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers of semiconducting transition metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charge conversion due to their high spin-orbit coupling and lack of inversion symmetry in their crystal structure. However, reports of direct measurement of spin-to-charge conversion at TMD-based interfaces are very much limited. Here, we report on the room temperature observation of a large spin-to-charge conversion arising from the interface of Ni80Fe20 (Py) and four distinct large area (∼ 5 × 2 mm 2 ) monolayer (ML) TMDs namely, MoS2, MoSe2, WS2, and WSe2. We show that both spin mixing conductance and the Rashba efficiency parameter (λIREE) scales with the spin-orbit coupling strength of the ML TMD layers. The λIREE parameter is found to range between −0.54 and −0.76 nm for the four monolayer TMDs, demonstrating a large spin-tocharge conversion. Our findings reveal that TMD/ferromagnet interface can be used for efficient generation and detection of spin current, opening new opportunities for novel spintronic devices.

Spin pumping has been considered a powerful tool to manipulate the spin current in a ferromagnetic/nonmagnetic (FM/NM) system, where the NM part exhibits large spin–orbit coupling (SOC). In this work, the spin pumping in β-W/Interlayer (IL)/Co2FeAl (CFA) heterostructures grown on Si­(100) is systematically investigated with different ILs in which SOC strength ranges from weak to strong. We first measure the spin pumping through the enhancement of effective damping in CFA by varying the thickness of β-W. The damping enhancement in the bilayer of β-W/CFA (without IL) is found to be ∼50% larger than the Gilbert damping in a single CFA layer with a spin diffusion length and spin mixing conductance of 2.12 ± 0.27 nm and 13.17 ± 0.34 nm–2, respectively. Further, the ILs of different SOC strengths such as Al, Mg, Mo, and Ta were inserted at the β-W/CFA interface to probe their impact on damping in β-W/ILs/CFA. The effective damping reduced to 8% and 20% for Al and Mg, respectively, whereas it increased to 66% and 75% with ILs of Mo and Ta, respectively, compared to the β-W/CFA heterostructure. Thus, in the presence of ILs with weak SOC, the spin pumping at the β-W/CFA interface is suppressed, while for the high SOC ILs effective damping increased significantly from its original value of β-W/CFA bilayer using a thin IL. This is further confirmed by performing inverse spin Hall effect measurements. In summary, the transfer of spin angular momentum can be significantly enhanced by choosing a proper ultrathin interface layer. Our study provides a tool to increase the spin current production by inserting an appropriate thin interlayer which is useful in modifying the heterostructure for efficient performance in spintronics devices.

Fe3Sn2, a kagome ferromagnet, is a potential quantum material with intriguing topological features. Despite substantial experimental work on the bulk single crystals, the thin film growth of Fe3Sn2 remains relatively...

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Mn3Sn is a non‐collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High‐quality epitaxial c‐plane Mn3Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on c‐plane epitaxial Mn3Sn/Ni80Fe20, spin‐diffusion length (λMn3Sn$\lambda _{\rm Mn_3Sn}$), and spin Hall conductivity (σSH) of Mn3Sn thin films are measured: λMn3Sn=0.42±0.04$\lambda _{\rm Mn_3Sn}=0.42\pm 0.04$ nm and σSH=−7020.33emℏ/e0.33emΩ−1${\sigma}_{\mathrm{SH}}=-702\ \hslash /e\ {\Omega}^{-1}$cm−1. While λMn3Sn$\lambda _{\rm Mn_3Sn}$ is consistent with earlier studies, σSH is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in these films, leading to the observed behavior. These findings demonstrate a technique for engineering σSH of Mn3Sn films by employing Mn composition for functional spintronic devices.