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Indium nitride is one of the very few semiconductors which is known to have a superconducting phase at temperatures of Tc > 1 K. Superconductivity occurs in a window of carrier densities of approximately  1018–1020 cm−3. This is a very low density when compared to other superconductors (i.e. metals, alloys, high Tc oxides) and thus raises interesting fundamental questions as well as technological possibilities. In this paper we address one key question about the dimensionality of the superconducting state of InN by using angle dependent critical field measurements. Our samples were grown by two different growth techniques (chemical vapour deposition and plasma-assisted molecular beam epitaxy) on c-oriented sapphire, with and without a GaN buffer layer. In both cases we find that for film thicknesses much larger than the coherence length d ≫ ξ, the angle dependence of the critical field (down to T < 280 mK) with respect to the c-axis continues to be clearly two-dimensional, demonstrating a characteristic cusp when the angle crosses 90° with respect to the c-axis. This indicates that the superconducting electrons are most likely confined to a layer much thinner than the thickness of the InN film. Further we find the magnitude of the gap to be 2Δ(0)/kBTc = 3.6, very close to the BCS prediction.

The quenching of the fluorescence of 1-aminopyrene (1-Ap) by reduced graphene oxide (rGO) has been investigated using spectroscopic techniques. In spite of the upward curvature in the Stern-Volmer plot, the unchanged spectral signature of the absorption of 1-Ap in the presence of rGO and the decrease in fluorescence lifetime with increasing rGO concentration point toward the dynamic nature of the quenching. Detailed analysis of steady state and time-resolved spectroscopic data has shown that the quenching arises due to the photoinduced electron transfer from 1-Ap to rGO. This is again supported by estimating the Gibb's free energy change for the ground as well as excited state electron transfer. Ab initio calculations under the density functional theory (DFT) formalism reveal that the possibility of π-π stacking is very slim in the 1-Ap-rGO system and the electron density resides completely on 1-Ap in the highest occupied molecular orbital (HOMO) and on graphene in the lowest unoccupied molecular orbital (LUMO), supporting the experimental findings of the intermolecular electron transfer between 1-Ap and rGO in the excited state.

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Coherent transmission of Cooper pairs through a non-superconducting medium is a key challenge for hybrid electronics with superconductors, normal metals and semiconductors. While superconductor-normal metal-superconductor (SNS) junctions have been known for quite sometime, including a low carrier density region or a two-dimensional electron gas (2DEG) in the path of superconducting electrons is relatively less explored. Indeed, this is due to the limited choice of materials that would make ohmic contacts to such systems, while simultaneously supporting a superconducting phase. In this paper we show a coherent transmission of supercurrent through a degenerate semiconductor over a length ≈2μm with a critical magnetic field B c ≈8T at 1.6K and T c ≈5K at zero magnetic field. This length scale is much larger than the typical thickness of a Josephson junction. Our system is a fragment of a GaN nanowall network that has been shown to support a high mobility 2DEG (μ n >10 4 cm 2 V −1 s −1 ). The current and voltage probes were superconducting tungsten-gallium composite electrodes and the measurements could be done in four-probe geometry. We demonstrate ballistic type carrier transport with a near ideal transparency of 1 and a critical current (I c ) large enough such that the Josephson coupling parameter . Some features in magneto-transport data suggest that there is possibly a small magnetic moment forming in the semiconductor fragment. In addition the combination of a T c typical of elemental metallic superconductors, but a critical field that appears to be higher than the Clogston-Chandrasekhar limit, may be indicative of the emergence of a triplet pairing mechanism in these structures.

We report here the results of two-dimensional electron gas based micro-Hall magnetometry measurements and micromagnetic simulations of dipolar coupled nanomagnets of Ni80Fe20 arranged in a double square ring-like geometry. We observe that although magnetic force microscopy images exhibit single domain like magnetic states for the nanostructures, their reversal processes may undergo complex behavior. The details of such reversal behavior are observed as specific features in micro-Hall magnetometry data, which are comparable with the micromagnetic simulation data.