The use of high energy proton implantation is demonstrated to precisely and independently shift the energies of both exciton and photon components of GaAs microcavity exciton–polaritons. The technique applies post‐growth proton implantation and annealing steps in order to create a small local interdiffusion across either the quantum well–barrier material interfaces, or between the layers of the cavity distributed Bragg reflector mirrors to induce energy shifts to the exciton or photon components, respectively. The polariton mode is tunable by an energy exceeding 10 meV with a corresponding increase (decrease) in effective mass for photon (exciton) energy shifts, while maintaining narrow‐linewidth polariton photoemission and condensation for both photonic and excitonic polaritons. This technique uniquely enables new opportunities to explore coherent polariton matter with narrow‐linewidth and heavy masses in tight‐binding, non‐Hermitian, and topological landscapes with sub‐µm feature‐sizes, while also being a simple post‐growth process.
A new generation of anode interlayers (AILs) has been introduced in recent years for improving the efficiency and stability of organic solar cell (OSC) devices. Electrode interlayer modification is a simple and effective way of enhancing OSC device performance. We used poly(vinyl pyrrolidone) (PVP) as an AIL modifier to alter molybdenum trioxide (MoO 3) and vanadium pentoxide (V 2 O 5) AILs in OSC devices and compared them with pure metal oxide AILs. Using this modification, average power conversion efficiencies were raised from 5.2% AE 0.4% to 6.0% AE 0.3% for OSCs with MoO 3-based AILs, and from 6.2% AE 0.1% to 6.8% AE 0.3% for OSCs with V 2 O 5-based AILs. Moreover, the PVP-metal oxide AILs also improved the overall device quality, producing a nanotextured morphology with good optical properties and favorable chemical composition. Beneficial wetting properties for interfacial adhesion between anode and active layer are observed using contact angle measurements. Overall, devices with PVP-modified metal oxide AILs showed promising results with greater device stability compared to pure metal oxide AIL-based OSC devices.
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