We investigated the thermoelectric properties of melt-grown Mg2Sn crystals doped with various impurities such as Al, Bi, Sb, P, In, Ag, Au, W, and Mo; a large difference in the carrier concentration was observed for each impurity. The Bi-and Sb-doped Mg2Sn crystals showed ntype conductivity and had enough electron concentrations in the order of 10 19 cm -3 by doping, and the maximum figure of merit (ZT) of 0.35 was observed in the crystal doped with 1.5 at% of Bi at 550 K. The Ag-, P-, In-, Au-, W-, and Mo-doped materials exhibited p-type conductivity. The Ag-doped samples had sufficient hole concentrations of more than 10 19 cm -3 , and the ZT reached 0.25 in the sample doped with 1.0 at% of Ag at 450 K. The P-and Sb-doped Mg2Sn crystals became dark gray powder within 1-2 weeks, but the crystals doped with the other impurities did not. This result suggested that the oxidation resistance of Mg2Sn crystals varied greatly depending on the type of dopant impurity.
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