We report that dark excitons can have a large contribution to the emission intensity in carbon nanotubes due to an efficient exciton conversion from a dark state to a bright state. Time-resolved photoluminescence measurements are used to investigate decay dynamics and diffusion properties of excitons, and we obtain intrinsic lifetimes and diffusion lengths of bright excitons as well as diffusion coefficients for both bright and dark excitons. We find that the dark-to-bright transition rates can be considerably high, and that more than half of the dark excitons can be converted into the bright excitons. The state transition rates have a large chirality dependence with a family pattern, and the conversion efficiency is found to be significantly enhanced by adsorbed air molecules on the surface of the nanotubes. Our findings show the nontrivial significance of the dark excitons on the emission kinetics in low dimensional materials, and demonstrate the potential for engineering the dark-to-bright conversion process by using surface interactions.
Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10 Hz.
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