For making a‐Si TFT array, fast photo‐speed positive photoresist with moderate taper angle profile is preferred. On the other hand, for making poly‐Si TFT, fast i‐line photo‐speed positive photoresist that shows a very vertical profile and has fine resolution is required. Because of the required performance is slightly different in a‐Si and poly‐Si TFT, different types of photoresist are usually used. This paper introduces a novel positive patterning photoresist that might be useful for both a‐Si and poly‐Si TFT manufacturing. This new type of positive photoresist shows fast photo‐speed and its pattern profile is vertical with very fine resolution. Under suitable process conditions, resolution down to 1um line and space is achieved even with contact aligner exposure. At the same time taper angle is controllable by choosing proper process conditions such as prebake temperature, inserting post exposure bake (PEB) process or not.
Although much efforts have been made to develop higher performance excimer lasers mainly in Europ e and Japan supported by the Community and the Government, an interdisciplinary subject in the paper title has not ever been investigated in detail. To take care of this un-attacked research region lyin g between various research groups, we tried to measure the beam quality of a discharge-pumped KrF laser under a rather high repetition rate operation. As we are interested in the diagnostics of various big h speed phenomena, we measured the beam quality with advanced high speed photography. The spatia 1 and temporal beam patterns were observed under various experimental conditions, and they were analyzed to start our high repetition-rate experiments. The results showed that an unstable resonato r could produce high quality laser beams with the lower beam divergence angle.
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