The heteroepitaxial β-Ga2O3 thick films were rapidly grown on various oriented sapphire substrate using carbothermal reduction method. The β-Ga2O3 films were prepared in our home-made vertical dual temperature zone furnace. The growth direction as well as surface morphology show the strong dependence on the orientation of the sapphire substrate. The fastest growth rate was obtained reaching approximate 15 μm/h on c-plane sapphire substrate according to the average 30 μm thickness of β-Ga2O3 films grown for 2h measured by cross-section scanning electron microscope. The Raman spectra indicate the pure-phase β-Ga2O3 films without obvious strain. The bandgap for grown films were in range of 4.65-4.7 eV confirmed by X-ray photoelectron spectra and Tauc plot from absorption spectra. Secondary ion mass spectrometry was used to check the impurities indicating a limited amount of residual carbon inside the films even though graphite as the reducing agent. The results in this work give promising alternative method of rapid epitaxial β-Ga2O3 thick film for the application on high-power electronic devices.
We investigated the influence of the growth temperature, O2 flow, molar ratio between Ga2O3 powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire (0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga2O3 illustrate that β-Ga2O3 growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga2O3 films was produced when the O2 flow was 20 sccm. To guarantee that β-Ga2O3 films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga2O3 powder should be set at 10 : 1.
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