Although perovskite light-emitting diodes (PeLEDs) have recently experienced significant progress, there are only scattered reports of PeLEDs with both high efficiency and long operational stability, calling for additional strategies to address this challenge. Here, we develop perovskite-molecule composite thin films for efficient and stable PeLEDs. The perovskite-molecule composite thin films consist of in-situ formed high-quality perovskite nanocrystals embedded in the electron-transport molecular matrix, which controls nucleation process of perovskites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approximately 100 h. In addition, we find that the device degradation mechanism at high driving voltages is different from that at low driving voltages. This work provides an effective strategy and deep understanding for achieving efficient and stable PeLEDs from both material and device perspectives.
Despite quick development of perovskite light‐emitting diodes (PeLEDs) during the past few years, the fundamental mechanisms on how ion migration affects device efficiency and stability remain unclear. Here, it is demonstrated that the dynamic redistribution of mobile ions in the emissive layer plays a key role in the performance of PeLEDs and can explain a range of abnormal behaviours commonly observed during the device measurement. The dynamic redistribution of mobile ions changes charge–carrier injection and leads to increased recombination current; at the same time, the ion redistribution also changes charge transport and results in decreased shunt resistance current. As a result, the PeLEDs show hysteresis in external quantum efficiencies (EQEs) and radiance, that is, higher EQEs and radiance during the reverse voltage scan than during the forward scan. In addition, the changes on charge injection and transport induced by the ion redistribution also well explain the rise of the EQE/radiance values under constant driving voltages. The argument is further rationalized by adding extra formamidinium iodide (FAI) into optimized PeLEDs based on FAPbI3, resulting in more significant hysteresis and shorter operational stability of the PeLEDs.
Metal halide perovskites have demonstrated impressive properties for achieving efficient monochromatic light-emitting diodes. However, the development of white perovskite light-emitting diodes (PeLEDs) remains a big challenge. Here, we demonstrate a...
Orientational manipulation of transition dipole moment (TDM) plays an important role in controlling the polarization of excited states in light emission as well as lasing actions. The present work discovers vertically aligned TDMs in hybrid perovskite films through angle‐resolved photoluminescence (PL) measurements, which show enhanced emission through the film edge. With increasing excitation intensity, the edge emission induced by these vertically aligned TDMs becomes dominant and eventually leads to amplified spontaneous emission (ASE) through the edge view. Meanwhile, polarized emission of both PL and electroluminescence (EL) provides further evidence for vertically aligned TDMs. Surprisingly, the degree of polarization (DOP) through the film edge is increased when grain boundary defects are passivated through either stochiometric engineering or self‐passivation by mobile ions under working conditions. With increasing DOP, ASE threshold of the perovskite film is reduced owing to enhanced collective behaviors of light‐emitting states. This work presents a useful method to manipulate TDMs in organic–inorganic hybrid perovskites.
Quasi-two-dimensional (Q-2D) perovskites
featured with multidimensional
quantum wells (QWs) have been the main candidates for optoelectronic
applications. However, excessive low-dimensional perovskites are unfavorable
to the device efficiency due to the phonon–exciton interaction
and the inclusion of insulating large organic cations. Herein, the
formation of low-dimensional QWs is suppressed by removing the organic
cation 1-naphthylmethylamine iodide (NMAI) through ultrahigh vacuum
(UHV) annealing. Perovskite light-emitting diode (PLED) devices based
on films annealed with optimized UHV conditions show a higher external
quantum efficiency (EQE) of 13.0% and wall-plug efficiency of 11.1%
compared to otherwise identical devices with films annealed in a glovebox.
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