In this article, a novel dual-band differential bandpass filter using (SIRs) is designed. To demonstrate the design ideas, the differential and common mode equivalent half circuits are built and studied. Two resistors are connected between the two ends of the SIRs to consume the power in common mode. A capacitor is connected between the Ground and Center of the SIR to adjust the spurious frequencies, also strength the coupling of the two SIRs. The theoretical analysis shows the second band can be obtained by the proper impedance ratios of the resonances and the capacitor connected to the resonator. Two through ground vias (TGVs) connecting the top and bottom sides of the SIR filter, are used to realize the common mode rejection. To investigate the proposed filter in detail, a set of design equations are derived based on the circuit theory and transmission line theory. A phototype dual-band differential filter operating at 1.5 and 2.75 GHz has been realized to validate the proposed concept and theory. V C 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:468-473, 2015.
In the 5G communication utilizing millimeter-wave (mmWave) band, multilayer configuration is popular for mmWave antenna with module-level integration and high-density design. However, multilayer construction adds several substrate layers and metallic ground layers to RF signal paths, which induces extra capacitances and inductances to the original antenna, thereby deteriorating impedance matching, and distorting radiation patterns. In this paper, we investigate the influence of multilayer structure on antenna performances, and apply substrate integrated coaxial line (SICL) design to eliminate these interferences from multilayer configuration. Equivalent circuit model of the multilayer configuration with SICL is presented and verified by simulations. A mmWave antenna unit and the 1 Â 4 array in multilayer configuration with SICL design are measured. Experiments show that SICL design enables impedance matching and radiation patterns to be maintained without distortions when applying multiple layers to the mmWave antenna, validating this method. It can be applied to 5G mmWave antennas that desire multilayer construction.
This paper presents a 60 GHz low loss phase shifter characterized by 360 degree phase shift and low variation of insertion loss using GaAs pHEMT process. The circuit contains a reflection type phase shifter (RTPS) and a switch line type phase shifter (SLTPS). A pair of Schottky diodes connected by a length of microstrip line is terminated to the through and coupled ports of Lange coupler as reflective variable loads. The optimum performance is attained when the electronic length is 75 um and the total finger width is 40 um after simulation using Agilent Advanced Design System. A one bit switch line type phase shifter (SLTPS) is employed as a 0/ʌ phase shifter. The measured results show that this 60 GHz hybrid phase shifter can achieve 360 degree phase variation with insertion loss varying from 7.5~10.7 dB.Index Terms -60GHz, phase shifter, reflective variable load, switch line type , 360 degree.
In this paper, a tunable filter integrated SPDT switch based on PIN diode is proposed. The band-pass filter response is realized by using microstrip lines with different characteristic impedances, and the filter-integrated SPDT switch with tunable center frequency is designed by loading a varactor diode and PIN diodes. The measured results show that its filter response can be tuned in the range of 1.5 to 2.065 GHz, the insertion loss is 1.53-2.69 dB, and with well return loss and port isolation.
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