Sm[Formula: see text]-doped bismuthate glass has been synthesized by means of the classic melt-quenching technique. Its optical properties were characterized, which included refractive index, absorption and fluorescence spectra. The measured data suggest that the Sm[Formula: see text]-doped bismuthate glass is suitable for optoelectronic applications. A Sm[Formula: see text]-doped bismuthate glass waveguide operating at 1.539 [Formula: see text]m has been manufactured by using the proton implantation with a 0.4 MeV energy and a 8.0 × 10[Formula: see text] ions⋅cm[Formula: see text] fluence for the first time to our knowledge. The effective refractive indices of the propagation modes for the glass waveguide were obtained by the m-line technique. The energy loss caused by the collision of the irradiated protons and the nuclei of the target Sm[Formula: see text]-doped bismuthate glass was calculated by the SRIM 2013. The refractive index profile and the near-field guided mode distribution for the waveguide structure were fitted through the reflectivity calculation method (RCM) and the FD-BPM method, respectively. The proton-implanted Sm[Formula: see text]-doped bismuthate glass waveguide is an alternative for an integrated device in the telecommunication band.
The 400 keV proton implantation with a fluence of [Formula: see text] ions/cm2 was applied on the [Formula: see text] co-doped phosphate glass to fabricate a planar waveguide structure. The mode profile at the end face of the waveguide was measured by the end-face coupling technique. The energy loss profile of the energetic protons was calculated by the SRIM 2013. The refractive index distribution was simulated by the reflectivity calculation method. Based on these results, the formation theory of the planar waveguides was discussed through simulating the energy loss distribution and analyzing the reconstructed refractive index profile, which could be used for applications in the future integrated optical systems.
Abstract. NaOH and Na 2 B 4 O 7 ·10H 2 O solutions of texturization were investigated and a series of comparative experiments were made by our group. The surface microstructures studied with a scanning electronic microscope (SEM). The different etching time and the different concentration of the solution have a larger effect on the pyramid density and the pyramid size. The SEM pictures showed that the surfaces covered with more perfect uniformly pyramid structures was obtained after texturing with NaOH of 2wt% and Na 2 B 4 O 7 ·10H 2 O of 2wt% solutions at 80℃ and 25min. The pyramid density was 81.8% and the mean size was 1.75μm. This result showed the method based on NaOH and Na 2 B 4 O 7 ·10H 2 O solutions was a promising method for large-scale industrial applications for Raman basal.
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