GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquids have been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As a result, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafer sample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs can be promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapid and cost-effective.
GaN-based light emitting diodes (LEDs), corrosive liquid, light output power, textured ITO
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