The Quantum Dot Infrared Photo Detectors (QDIPs) become the leading technology in semiconductor detectors. This attraction comes from the properties of these devices that overpowers over the currently available detectors like Quantum Well Infrared Photo Detectors (QWIPs). In this paper, different Z-length dimensions are used to investigate the behavior of energy levels inside the quantum dots. The Z-length is also applied to investigate the shift of the operating wavelength and adjust the quantum dot performance by multiband Schroedinger-Poisson simulation. The generated electrons in the detection process are one of the most important properties of these dots. A software program is used to simulate the wave function, energy state, and absorption for different Z-dimensions. Results showed that the bandgap decreases and the absorption response shifts with increasing Z-dimension.
IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among each layer. A specific selected layer can be added with precise properties for enhancing the device and increase the low current operate requirement. In this paper, an IGBT device is an enhanced and better performance achieved by the addition of a heavily positive doped intermediate layer. The collector current is decreased from 0.05 mA to 0.03 mA at 600 V. Decreasing the current results in higher efficient device by decreasing the amount of heat produced by the device.
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