With the progressive requirements of modern electronics, outstanding electromagnetic interference (EMI) shielding materials are extensively desirable to protect intelligent electronic equipment against EMI radiation under various conditions, while integrating functional applications. So far, it remains a great challenge to effectively construct thin films with diversiform frameworks as integrated shielding devices. To simultaneously promote electromagnetic waves (EMWs) attenuation and construct integrated multifunction, an alternating-layered deposition strategy is designed to fabricate polydimethylsiloxane packaged Ndoped MXene (Ti 3 CNT x )/graphene oxide wrapped hollow carbon fiber/silver nanowire films (p-LMHA) followed by annealing and encapsulation approaches. Contributed by the synergistic effect of consecutively conductive networks and porous architectures, LMHA films exhibit satisfying EMI shielding effectiveness of 73.2 dB at a thickness of 11 μm, with a specific EMI shielding effectiveness of 31 150.1 dB•cm 2 •g −1 . Benefiting from the encapsulation, p-LMHA films further impart hydrophobicity and reliability against harsh environments. Besides, p-LMHA devices integrate a rapid-response behavior of the electro/photothermal and, meanwhile, function as a healthcare monitoring sensor. Therefore, it is believed that the p-LMHA films assembled by independent conductive networks with reliability offer a facile solution for practical multimodular protection of devices with integration characteristics.
Low-pressure chemical vapor deposition (LPCVD) technique is utilized for SiN x passivation of AlGaN/GaN high-electron-mobility transistors (HEMTs). A robust SiN x / AlGaN interface featuring high thermal stability and well-ordered crystalline structure is achieved by a processing strategy of "passivation-prior-to-ohmic" in HEMTs fabrication. Effective suppression of surface-trap-induced current collapse and lateral interface leakage current are demonstrated in the LPCVD-SiN x passivated HEMTs, as compared with conventional plasma-enhanced chemical vapor deposition-SiN x passivated ones. Energy dispersive X-ray spectroscopy mapping analysis of SiN x /AlGaN interfaces suggests the interface traps are likely to stem from amorphous oxide/oxynitride interfacial layer. Index Terms-AlGaN/GaN high-electron-mobility transistors (HEMTs), current collapse, low-pressure chemical vapor deposition (LPCVD), oxidation, SiN x passivation.
COVID-19 patients can recover with a median SARS-CoV-2 clearance of 20 days post initial symptoms (PIS). However, we observed some COVID-19 patients with existing SARS-CoV-2 for more than 50 days PIS. This study aimed to investigate the cause of viral clearance delay and the infectivity in these patients. Demographic data and clinical characteristics of 22 long-term COVID-19 patients were collected. The median age of the studied cohort was 59.83 ± 12.94 years. All patients were clinically cured after long-term SARS-CoV-2 infection ranging from 53 to 112 days PIS. Peripheral lymphocytes counts were normal. The ratios of interferon gamma (IFN-c)-secreting cells to total CD4 ? and CD8 ? cells were normal as 24.68% ± 9.60% and 66.41% ± 14.87% respectively. However, the number of IFNc-secreting NK cells diminished (58.03% ± 11.78%). All patients presented detectable IgG, which positively correlated with mild neutralizing activity (Mean value neutralisation antibodies titers = 157.2, P = 0.05). No SARS-CoV-2 virus was isolated in Vero E6 cells inoculated with nasopharyngeal swab samples from all patients 50 days PIS, and the cytopathic effect was lacking. But one sample was positive for SARS-CoV-2 nucleic acid test in cell supernatants after two passages. Genome sequencing revealed that only three synonymous variants were identified in spike protein coding regions. In conclusion, decreased IFN-c production by NK cells and low neutralizing antibodies might favor SARS-CoV-2 long-term existence. Further, low viral load and weak viral pathogenicity were observed in COVID-19 patients with long-term SARS-CoV-2 infection.
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