The present work describes the synthesis of difluoro‐boradiazaindacenes (Bodipy) functionalized at the central 8‐position by phenylamino moieties easily transformable into phenyl amide scaffoldings. Molecules carrying three linear or branched chains were prepared and characterized. An X‐ray crystal structure for the pivotal trimethoxyphenyl‐Bodipy derivative was determined, and the packing is discussed in terms of molecular interactions; a key feature for the formation of thin films. All of the dyes are thermally stable up to 170 °C but no liquid‐crystalline phases are observed. Reversible reduction and oxidation processes occur around +0.97 and −1.34 V, respectively, versus saturated calomel electrode in solution and the electroactivity and photoluminescence are maintained in thin films produced by vacuum evaporation. Interestingly, two distinct emissions are observed at 550 and 635 nm by electroluminescence of the trimethoxyphenyl‐Bodipy derivative, corresponding to the luminescence of isolated molecules and dimers, respectively. Doping Alq3 films with this Bodipy molecule by vacuum evaporation produces organic light‐emitting diodes (OLEDs) in which very efficient energy transfer from the Alq3 matrix to the Bodipy occurs by a resonance mechanism involving the first Bodipy excited state. Yellow light (550 nm, 344 cd m−2 at 15 V) is emitted at low doping concentration (7 mol %), whereas red light (635 nm, 125 cd m−2 at 15 V) is emitted at higher concentration (19 mol %). Dispersion of the Bodipy into a fluorescent poly(N‐vinylcarbazole) polymer (PVK) (≈3 mol % per repeating unit of PVK) by solution processing exclusively produces yellow emission owing to the isolated Bodipyfluorophore (550 nm, 213 cd m−2 at 15 V). The second excited state of the Bodipy dye is likely involved during energy transfer from the PVK matrix.

Quantum dot (QD) LEDs of high color purity, and low turn-on voltage and leakage current are prepared using a solvent free method. First, a monolayer of QDs is formed at the air/water interface, which is then transferred with a PDMS stamp onto the device. The method is applicable to large substrates and reduces materials consumption as compared to other deposition techniques.

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A multilayer thin-film encapsulation process based on the use of Atomic Layer Deposition of Al 2 O 3 for organic light-emitting diodes (OLED) has been developed at LETI. Its impact onto OLED characteristics and onto the lifetime degradation of devices has been studied. The degradation model has been compared to the usual model of glass-encapsulated OLED and the performances of the thin-film encapsulation has been evaluated upon storage in 65°C/85%RH conditions.

An alternative design of a semitransparent cathode for top‐emission white‐fluorescent organic light‐emitting diodes (OLEDs) has been investigated. The scope of this study was to improve the luminance of OLEDs used for displays while keeping the current density versus voltage characteristic unchanged for addressing purposes. The use of an optical simulation tool allowed the optimization of the tri‐layer cathode WO3/Ag/WO3 to increase the light out‐coupling coefficient of the device leading to an increased white emission compared with a reference device with a Ca/Ag cathode. An increase of ~40% in luminance has been calculated by simulation and experimentally confirmed. The p‐i‐n OLED structure underneath the tri‐layer cathode allowed an efficient injection of electrons independently from the work function of WO3. The WO3/Ag/WO3 cathode has been also confirmed to be compatible with the atomic layer deposition technique for thin film encapsulation. Finally, lifetime measurements up to 600 h have been carried out to quantify the enhancements induced by the new cathode compared with the control device. It has been found that lifetimes of both cathode architectures are similar on this time scale, while the WO3/Ag/WO3 cathode shows a lower voltage drift versus aging.

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