Van der Waals material Fe5GeTe2, with its long-range ferromagnetic ordering near room temperature, has significant potential to become an enabling platform for implementing novel spintronic and quantum devices. To pave the way for applications, it is crucial to determine the magnetic properties when the thickness of Fe5GeTe2 reaches the few-layers regime. However, this is highly challenging due to the need for a characterization technique that is local, highly sensitive, artifact-free, and operational with minimal fabrication. Prior studies have indicated that Curie temperature T C can reach up to close to room temperature for exfoliated Fe5GeTe2 flakes, as measured via electrical transport; there is a need to validate these results with a measurement that reveals magnetism more directly. In this work, we investigate the magnetic properties of exfoliated thin flakes of van der Waals magnet Fe5GeTe2 via a quantum magnetic imaging technique based on nitrogen vacancy in diamond. Through imaging the stray fields, we confirm room-temperature magnetic order in Fe5GeTe2 thin flakes with thickness down to 7 units cell. The stray field patterns and their response to magnetizing fields with different polarities is consistent with previously reported perpendicular easy-axis anisotropy. Furthermore, we perform imaging at different temperatures and determine the Curie temperature of the flakes at ≈300 K. These results provide the basis for realizing a room-temperature monolayer ferromagnet with Fe5GeTe2. This work also demonstrates that the imaging technique enables a rapid screening of multiple flakes simultaneously as well as time-resolved imaging for monitoring time-dependent magnetic behaviors, thereby paving the way towards high throughput characterization of potential 2D magnets near room temperature and providing critical insights into the evolution of domain behaviors in 2D magnets due to degradation.

Two-dimensional (2D) magnetic van der Waals materials provide a powerful platform for studying the fundamental physics of low-dimensional magnetism, engineering novel magnetic phases, and enabling thin and highly tunable spintronic devices. To realize high-quality and practical devices for such applications, there is a critical need for robust 2D magnets with ordering temperatures above room temperature that can be created via exfoliation. Here, the study of exfoliated flakes of cobalt-substituted Fe 5 GeTe 2 (CFGT) exhibiting magnetism above room temperature is reported. Via quantum magnetic imaging with nitrogen-vacancy centers in diamond, ferromagnetism at room temperature was observed in CFGT flakes as thin as 16 nm corresponding to 16 layers. This result expands the portfolio of thin roomtemperature 2D magnet flakes exfoliated from robust single crystals that reach a thickness regime relevant to practical spintronic applications. The Curie temperature T c of CFGT ranges from 310 K in the thinnest flake studied to 328 K in the bulk. To investigate the prospect of high-temperature monolayer ferromagnetism, Monte Carlo calculations were performed, which predicted a high value of T c of ∼270 K in CFGT monolayers. Pathways toward further enhancing monolayer T c are discussed. These results support CFGT as a promising platform for realizing high-quality room-temperature 2D magnet devices.

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This paper reports on the demonstration of microwave power performance at 30 GHz on InAlN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) on silicon substrate by using the Hf0.5Zr0.5O2 (HZO) as a gate dielectric. Compared with Schottky gate HEMT (SG-HEMTs), the MISHEMT with a gate length (LG) of 50 nm presents a significantly enhanced performance with an ON/OFF current ratio (ION/IOFF) of 9.3 × 107, a subthreshold swing (SS) of 130 mV/dec, a low drain-induced barrier lowing (DIBL) of 45 mV/V, and a breakdown voltage of 35 V. RF characterizations reveal a current gain cutoff frequency (fT) of 155 GHz and a maximum oscillation frequency (fmax) of 250 GHz, resulting in high (fT×fmax)1/2 of 197 GHz and the record high Johnson’s figure-of-merit (JFOM = fT×BV) of 5.4 THz∙V among the reported GaN MISHEMTs on Si. The power performance at 30 GHz exhibits a maximum output power of 1.36 W/mm, a maximum power gain of 12.3 dB, and a peak power-added efficiency of 21%, demonstrating the great potential of HZO/InAlN/GaN MISHEMTs for the Ka-band application.