Graphene and 2D analogs such as transition metal dichalcogenides (TMDCs) have been widely investigated for their tuneable electronic properties. There is a large spectrum of applications of such 2D analogs; for example, non-volatile memory, which is a key building block for future low-power consumer electronics. In this work, we have investigated a vertical heterostructure composed of a chemical vapour-deposited molybdenum disulphide transistor channel coupled with silicon tunnel oxide (SiO2) and hafnium oxide as a blocking barrier, with fluorographene (FGr) being used as the charge trapping medium. Owing to the larger trap density of FGr, the memory window is three times larger, and the data retention measurements at room temperature yield a 50% charge loss extrapolated to 10 years. The low barrier at the FGr/SiO2 interface induces a steeper charge loss for holes. Nevertheless, the stack can sustain at least to 550 cycles without showing any sign of degradation. Although bandgap engineering is required to improve the data retention, particularly for the holes, the combination studied here is an encouraging route for 2D-based non-volatile memories.
By means of a combined x-ray diffraction, magnetic susceptibility and specific heat study, we investigate the interplay between orthorhombic distortion and stripe-like antiferromagnetic (AFM) order in the Mott insulator BaCoS2 at TN = 290 K. The data give evidence of a purely electronic AFM transition with no participation of the lattice. The observation of large thermal fluctuations in the vicinity of TN and a Schottky anomaly unveils competing ground states within a minute ∼1 meV energy range that differ in the orbital and spin configurations of the Co ions. This interpretation suggests that the stripe-like order results from a spontaneous symmetry breaking of the geometrically frustrated pristine tetragonal phase, which offers an ideal playground to study the driving force of multi-orbital Mott transitions without the participation of the lattice.
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