Although some strategies have been triggered to address the intrinsic drawbacks of zinc (Zn) anodes in aqueous Zn‐ion batteries (ZIBs), the larger issue of Zn anodes unable to cycle at a high current density with large areal capacity is neglected. Herein, the zinc phosphorus solid solution alloy (ZnP) coated on Zn foil (Zn@ZnP) prepared via a high‐efficiency electrodeposition method as a novel strategy is proposed. The phosphorus (P) atoms in the coating layer are beneficial to fast ion transfer and reducing the electrochemical activation energy during Zn stripping/plating processes. Besides, a lower energy barrier of Zn2+ transferring into the coating can be attained due to the additional P. The results show that the as‐prepared Zn@ZnP anode in the symmetric cell can be cycled at a current density of 15 mA cm−2 with an areal capacity of 48 mAh cm−2 (depth of discharge, DOD ≈ 82%) and even at an ultrahigh current density of 20 mA cm−2 and DOD ≈ 51%. Importantly, a discharge capacity of 154.4 mAh g−1 in the Zn/MnO2 full cell can be attained after 1000 cycles at 1 A g−1. The remarkable effect achieved by the developed strategy confirms its prospect in the large‐scale application of ZIBs for high‐power devices.

We propose and numerically demonstrate an ultra-broadband graphene-based metamaterial absorber, which consists of multi-layer graphene/dielectric on the SiO2 layer supported by a metal substrate. The simulated result shows that the proposed absorber can achieve a near-perfect absorption above 90% with a bandwidth of 4.8 Thz. Owing to the flexible tunability of graphene sheet, the state of the absorber can be switched from on (absorption > 90%) to off (reflection > 90%) in the frequencies range of 3–7.8 Thz by controlling the Fermi energy of graphene. Moreover, the absorber is insensitive to the incident angles. The broadband absorption can be maintained over 90% up to 50°. Importantly, the design is scalable to develop broader tunable terahertz absorbers by adding more graphene layers which may have wide applications in imaging, sensors, photodetectors, and modulators.

In this study, the mechanical properties of grain boundaries (GBs) in planar heterostructures of graphene and hexagonal boron nitride (h-BN) were studied using the molecular dynamics method in combination with the density functional theory and classical disclination theory. The hybrid interface between graphene and h-BN grains was optimally matched by a non-bisector GB composed of pentagon-heptagon defects arranged in a periodic manner. GB was found to be a vulnerable spot to initiate failure under uniaxial tension; moreover, the tensile strength was found to anomalously increase with an increase in the mismatch angle between graphene and h-BN grains, i.e., the density of pentagon-heptagon defects along the GBs. The disclination theory was successfully adopted to predict the stress field caused by lattice mismatch at the GB. Comparison between stress contours of GBs with different mismatch angles demonstrates that the arrangement of 5-7 disclinations along the GB is crucial to the strength, and the stress concentration at the GB decreases with an increase in disclination density; this results in an anomalous increase of strength with an increase in the mismatch angle of grains. Moreover, the thermal transfer efficiency of the hybrid GB was revealed to be dependent not only on the mismatch angle of grains but also on the direction of the thermal flux. Thermal transfer efficiency from graphene to h-BN is higher than that from h-BN to graphene. Detailed analyses for the phonon density of states (PDOS) of GB atoms were carried out for the mismatch angle-dependence of interfacial conductance. Our results provide useful insights for the application of two-dimensional polycrystalline heterostructures in next-generation electronic nanodevices.

We propose and numerically demonstrate a design of bidirectional transverse electric (TE) polarized mode-order converter based on silicon-on-insulator platform. This converter is realized by introducing high refractive index material inlaid in a silicon slab waveguide. Simulated by three-dimensional finite-difference time-domain method, the forward (TE0 to TE1-like conversion) transmittance reaches approximately 88.2%, while the backward value (TE1 to TE0-like conversion) is about 89.4% at the wavelength of 1550 nm. The footprint of this converter is as small as 0.95 × 1.5 μm 2. Fabrication tolerance analysis demonstrates satisfactory robustness. Moreover, we present a polarization-independent converter with slightly modified geometry. The transmittance keeps above 87.2% within the wavelength range from 1500 nm to 1600 nm for both TE and transverse magnetic modes. These devices are expected to contribute to the on-chip mode division multiplexing.

Blogs have been expanded at an incredible speed in recent years. Plentiful personal information makes blogs a popular way mining user profiles. In this paper, we propose a novel bloggers' interests modeling approach based on forgetting mechanism. A new forgetting function is introduced to track interest drift. Based on that, the Short Term Interest Models (STIM) and Long Term Interest Models (LTIM) are constructed to describe bloggers' short-term and long-term interests. The experiments show that both models can identify bloggers' preferences well respectively.

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