Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperaturesand sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequencysputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decreasein the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases withincreasing the substrate temperature [1,2]. The electrical resistivity and optical transmittance of the Al:ZnO thin filmwere analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature setat 400℃, the resistivity decreases to a minimum value of 4.1×10-3 Ωcm and the transmittance increases to a maximumvalue of 85% of the Al:ZnO thin film
In this study, we use the 2.5 cm × 7.5 cm soda lime glass as the substrate. We used the ultrasonicator. Glass was dipped in the acetone, methanol and DI water respectively for 10 minutes. Ar(99.99%)gas was used as the sputtering gas. We varied the RF power between 100∼175 W with 25 W steps. Base pressure was kept by turbo molecular pump at 3.0×10-6 torr. Working pressure was kept by injection of Ar gas. ZnS thin films were deposited with the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. It is also clearly observed that, the intensity of the (111) XRD peak increases with increasing the RF power. Electrical properties were measured by hall effect methods at room temperature. The resistivity, carrier concentration, and hall mobility of ZnS deposited on glass substrate as a function of sputtering power. It can be seen that as the sputtering power increase from 100 to 175 W, the resistivity of the films on glass decreased significantly from 8.1×10-2 to 1.2×10-3 Ω․㎝. This behavior could be explained by the effect of the sputtering power on the mobility and carrier concentration. When the RF power increases, the carrier concentration increases slightly while the resistivity decreases significantly. These variation originate from improved crystallinity and enhanced substitutional doping as the sputtering power increases.
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