Articles you may be interested inEffect of band alignment on photoluminescence and carrier escape from InP surface quantum dots grown by metalorganic chemical vapor deposition on Si A mirage study of CdSe colloidal quantum dot films, Urbach tail, and surface states J. Chem. Phys. 137, 154704 (2012); 10.1063/1.4758318 The role of surface defects in multi-exciton generation of lead selenide and silicon semiconductor quantum dots J. Chem. Phys. 136, 064701 (2012); 10.1063/1.3682559 Effect of oxidation on the electronic structure of a Si 29 quantum dot: Calculations of redshifts in energy gap FIG. 2. Si ¼ O bond structures on curved surface (a) and on facet of Si QDs (b), and their density of states. 171601-2Huang et al.
The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as LN, LNO, LO1, and LO2 lines in PL spectra due to Si—N, Si—NO, Si=O, and Si—O—Si bonds on curved surface, respectively. Si—Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the LYb line of electroluminescence (EL) emission.
A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.
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