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Abstract— Field‐sequential color (FSC) is a potential technique for low‐power liquid‐crystal displays (LCDs). However, it still experiences a serious visual artifact, color break‐up (CBU), which degrades image quality. Consequently, the “Stencil Field‐Sequential‐Color (Stencil‐FSC)” method, which applies local color‐backlight‐dimming technology at a 240‐Hz field rate to FSC‐LCDs, is proposed. Using the Stencil‐FSC method not only suppressed CBU efficiently but also enhanced the image contrast ratio by using low average power consumption. After backlight signal optimization, the Stencil‐FSC method was demonstrated on a 32‐in. FSC‐LCD and effectively suppressed the CBU, which resulted in more than a 27,000:1 dynamic contrast ratio and less than 40‐W average power consumption.

A liquid crystal lens array with a hexagonal arrangement is investigated experimentally. The uniqueness of this study exists in the fact that using convex-ring electrode provides a smooth and controllable applied potential profile across the aperture to manage the phase profile. We observed considerable differences between flat electrode and convex-ring electrode; in particular the lens focal length is variable in a wider range from 2.5cm to infinity. This study presents several noteworthy characteristics such as low driving voltage; 30 μm cell gap and the lens is electrically switchable between 2D/3D modes. We demonstrate a hexagonal LC-lens array for capturing 3D images by using single sensor using integral imaging.

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

Electronic displays and flexible electronics are poised to significantly impact emerging industries, including displays, energy products, sensors and medical devices, building a market that will significantly grow in the future. The implementation of transparent electronic devices requires the use of material components that could be formed using controlled deposition in the appropriate orientation onto a transparent flexible substrate. Here, we report a simple and efficient means of depositing onto a flexible polyimide (PI) substrate a highly ordered and highly aligned zinc oxide (ZnO) film for use as a carrier transporting and semiconducting layer with controlled surface charge density for thin-film transistor (TFT) applications.The deposition approach is based on the solution-coating of a zinc-acetate suspension under controlled conditions of the spread flow rate, droplet size of the drops, speed limit, and the oxygen (ca. O 2 ) plasma treatment of the coated film surface on the PI substrate. The plasma surface interactions on the surface states of the ZnO films for various times (ca. 1-5 min) were studied using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Moreover, the effects of O 2 plasma and the subsequent thermal annealing in an O 2 atmosphere at 250 C on the properties of ZnO films were studied for its efficacy in TFT applications in terms of the charge carrier density and the change in the mobility. ZnO thin-film-based TFTs on PI exhibited a very high electron mobility of 22.8 cm 2 V À1 s À1 at a drain bias of 5 V after treatment with O 2 plasma for 2 min. Furthermore, the plasma treatment for long durations of time caused a reduction in the charge carrier density from 1.58 Â 10 19 cm À3 for the 2 min treatment to 1.13 Â 10 17 cm À3 for the 5 min treatment, and the corresponding electron mobility was changed from 22.8 and 3.1 cm 2 V À1 s À1 for the treatment times of 2 min and 5 min, respectively. The spin-coating technique used to deposit very thin ZnO films is currently used in microelectronics technology, which helps to ensure that the described ZnO thin-film deposition approach can be implemented in production lines with minimal changes in the fabrication design and in the auxiliary tools used in flexible electronics production.

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