We report a water-resistive and wearable triboelectric nanogenerator on a polyurethane/polyester textile substrate with a planarization layer. The power generation and reliability of the triboelectric nanogenerators (TENGs) fabricated utilizing a resin planarization layer were significantly enhanced in comparison with those of TENGs without the resin planarization layer. The planarization layer was deposited on the polyurethane/polyester textile substrate by using spin coating and ultraviolet curing to improve its surface properties and polarity. The output voltages and currents of TENGs based on a resin planarization layer on a polyurethane/polyester substrate were measured in the vertical contact-separation mode by using a counter unit containing Al electrodes and a polyimide friction layer. The TENGs exhibited a peak potential of over 30 V, which is about three times larger than that of the devices without such a planarization layer, and the corresponding maximum power density was 3.16 mW/m2. Furthermore, the results of endurance and water resistance tests carried out on the TENGs with a resin planarization layer on a textile substrate showed that such devices were suitable for use in applications in which the device must be worn.
Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.
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