A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was ≤2.0 × 1012 cm−2 eV−1 in an energy range of 0.05 ≤ ET − Ev ≤ 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 °C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface.
The electrical characteristics were evaluated for the metal-oxide-semiconductor (MOS) devices with Ti and Pt gates on the atomic-layer-deposited (ALD) HfO2. The equivalent oxide thickness (EOT) of the Ti gate is shown to be nearly the same as that of the Pt gate, which means that a negligible chemical reaction occurs between the gate and dielectric. The values of the effective metal work function (Φm,eff), extracted from the conventional relations of flatband voltage versus EOT, were ∼4.2eV for Ti and ∼5.4eV for Pt, respectively. However, somewhat higher values of Φm,eff were extracted by considering the existence of an interfacial layer and the high negative charge at an interface between HfO2 and interfacial layer. The exact values of Φm,eff were ∼4.37eV for Ti and ∼5.51eV for Pt, respectively. Therefore, the Ti gate is compatible with ALD-HfO2 and can be a candidate for n-type MOS devices.
Many people's social media feeds include posts in languages they do not understand. While previous research has examined bilingual social media users' language choices, little research has focused on how people make sense of foreign language posts. In the present study, we interviewed 23 undergraduate social media users about how they consume and make sense of posts in other languages. Interviewees reported that they often did not pay attention to or engage with foreign language posts, due to a lack of relevance and contextual knowledge. When they did actively engage with foreign language posts, interviewees did not rely solely on machine translation output but instead actively collected and combined various cues from within and outside the post in order to understand what it was about. Interviewees further reported different types of goals for trying to make sense of foreign language posts; some focused on simply extracting and understanding the emotional components of a post while others tried to gain a fuller understanding of a post, including its contextual and cultural meanings. Based on these findings, we suggest design possibilities that could better aid multilingual communication in social media.
Selfies are everywhere on social media. Research has focused only on who is posting selfies and has not addressed the audience members viewing selfies. This study aims to fill this gap by analyzing the judgments people make of selfies posted on Facebook. Using an online experiment, we test how including a selfie on a Facebook status update changes people's appraisals of narcissism, message appropriateness, and social attraction. We also consider how the valence and intimacy of the status update text interplay with the selfie to change social judgments. Participants rated posts with selfies as more narcissistic and inappropriate, and less socially attractive. Selfie evaluations also depended upon the valence and intimacy of the status update text. Gender of the selfie poster did not influence evaluation of posts. One implication from these results is that posting selfies on social media may lead to negative judgments about the poster.
Al2O3 thin films were deposited using tri-methyl aluminum and ozone by spatially separated atomic layer deposition (SALD). A large gap was kept between the reactor and substrates in an attempt to enhance the process gas flow. According to simulation data and deposition results, strong edge pumping for the dominantly lateral flow improved the gas isolation and deposition was very effective, with a resulting gap height of 5 mm. To compare this SALD process with conventional atomic layer deposition (ALD), the authors examined how the amount of source supplied, the deposition temperature, and the number of rotations affected the growth rate. The growth rate per rotation was saturated at ∼0.12 nm/rotation at a deposition temperature of 250 °C, which is comparable to the saturated growth rate of the same film using conventional ALD. The dielectric constant of the films was ∼8 and the film with a capacitance equivalent thickness of 3.2 nm had a leakage level of 9.8 × 10−8 A/cm2 (at −1 V). X-ray photoelectron spectroscopy peak area analysis indicates that the films deposited by SALD consist of Al2O3. This indicates that SALD is a viable option for several mass-production applications that require high throughput.
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