The possibility of SPM-based data storage is described regarding both its recording density and readout speed for ultrahigh density data storage. We consider their gap control to achieve high-speed readout. Suitable SPM-based storages are selected and their details are studied. As a result, scanning near-field optical microscope (SNOM)-and atomic force microscope (AFM)-based storages are expected to be candidates for future storage. SNOM-based storage is for 100 Gb in −2 . AFM-based storage is for 1 Tb in −2 . Using new force modulation AFM pit recording, an ultrahigh recording density of 1.2 Tb in −2 and a readout speed of 1.25 Mb s −1 are demonstrated.
To investigate whether field evaporation of gold atoms is responsible for dot formation in an atomic force microscope (AFM) gold-coated tip/vacuum/SiO2 film/p-type Si substrate configuration, we have performed elemental analysis of the dots and measured the dependence of the threshold voltage on SiO2 thickness with both polarities for the dot formation. The experiments demonstrate that it is feasible to form gold dots on SiO2 films 17–107 Å thick by adjusting the pulsed voltages applied to the gold-coated AFM tip. Energy dispersive x-ray spectroscopy (EDX) shows that the dots include gold. The threshold voltages increase almost linearly with the SiO2 thickness. Furthermore, the voltage with negative polarity is lower than that with positive polarity. These results provide evidence that the dot formation on the SiO2 film using AFM occurs by field evaporation.
A new thermomagnetic recording method using tunneling current in a scanning tunneling microscope as a heating source is proposed. In the experiment, pulse voltage of from 2–8 V with a pulse width of 1 ms is applied to the sample, while the probe position is kept at a bias voltage of 0.2 V and a tunneling current of 0.3 nA. As a result, we have demonstrated that thermally recorded magnetic domains are formed in a Pt/Co multilayered film and minimum domains as small as 0.2 μm in diameter are observed using a polarized optical microscope.
We have developed a new critical dimension (CD) measurement technique using atomic force microscope (AFM) which can measure width-dimensions and examine sidewall-shapes of fine patterns on a wafer. The technique employs a flared-type tip in combination with digital probing and multi-angle scanning mechanism that allows the tip to trace the sidewalls on both sides of a feature (or trench) by making physical contacts with the sidewall surface. First, by using finite element method (FEM) we analyzed deformation of the tip and cantilever to compensate errors caused by the deformation. To verify our compensation method we measured quartz reference patterns either with perpendicular sidewalls or undercuts. In this paper we will describe the applications and usefulness of this multi-angle operation and show some measurement results of ArF resist patterns with 200 nm width and 400 nm depth that were obtained with a flared tip of 120 nm diameter.
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