A facile route to prepare two-dimensional ZnO nanosheet structures on Si substrates was developed through the adoption of a ZnO seed-layer and suitable growth medium in this work. The characterization results showed that ZnO nanosheets could be grown on Si substrates with a pre-formed ZnO seed-layer at room temperature. The ZnO nanosheets, with thickness of 20-25 nm, were interwoven into networks to form a continuous nanosheet film. Room-temperature measurements of the photoluminescence (PL) spectra and water wettability for the resulting ZnO nanosheet structures showed high intensity ratio of the UV emission to the defect emissions and good hydrophilic property without UV illumination. The present work demonstrates that the adoption of a ZnO seed-layer is an effective approach for room-temperature growth of ZnO nanosheets grown on substrates.
Position- and density-controlled ZnO nanorod arrays (ZNAs) were successfully grown on a Si substrate through a low temperature (90 °C) hydrothermal approach assisted by pre-formed ZnO micro/nanodots. The ZnO dots on Si substrates were prepared by a spin-coating technique, through which the pattern and density of the dots could be easily changed. Accordingly, the position- and density-controlled growth of ZNAs was achieved. For the resulting density-controlled ZNAs, the density could range from (5.6 ± 0.01) × 10(2) to (1.2 ± 0.01) × 10(2) rods µm(-2). The room-temperature photoluminescence (PL) spectrum of ZNAs exhibited excellent UV emission. The water wettability measurements of the ZNAs with different density showed good hydrophobicity, and the ZNAs with the lowest density revealed a superhydrophobic characteristic with a water contact angle of 166.1°.
Surface modification of sapphire (0001) by Ga can eliminate multiple rotation domains in ZnO films. The existence of Ga at ZnO/sapphire interface was confirmed by x-ray energy dispersive spectroscopy in a transmission electron microscope. Atomic detail of mismatch dislocations at interface was imaged by high resolution transmission electron microscopy. Inside the ZnO film, there is a high density of stacking fault. Both pure gliding of ZnO ͑0001͒ plane and condensation of vacancies or interstatials are possible mechanisms to generate the stacking fault.
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