Recently, there have been extensive research efforts on developing high performance organolead halide based perovskite solar cells. While most studies focused on optimizing the deposition processes of the perovskite films, the selection of the precursors has been rather limited to the lead halide/methylammonium (or formamidium) halide combination. In this work, we developed a new precursor, HPbI3, to replace lead halide. The new precursor enables formation of highly uniform formamidium lead iodide (FAPbI3) films through a one‐step spin‐coating process. Furthermore, the FAPbI3 perovskite films exhibit a highly crystalline phase with strong (110) preferred orientation and excellent thermal stability. The planar heterojunction solar cells based on these perovskite films exhibit an average efficiency of 15.4% and champion efficiency of 17.5% under AM 1.5 G illumination. By comparing the morphology and formation process of the perovskite films fabricated from the formamidium iodide (FAI)/HPbI3, FAI/PbI2, and FAI/PbI2 with HI additive precursor combinations, it is shown that the superior property of the HPbI3 based perovskite films may originate from 1) a slow crystallization process involving exchange of H+ and FA+ ions in the PbI6 octahedral framework and 2) elimination of water in the precursor solution state.

High-gain photodetectors with near-infrared (NIR) sensitivity are critical for biomedical applications such as photoplethysmography and optical coherence tomography where detected optical signals are relatively weak. Current photodetection technologies rely on avalanche photodiodes and photomultipliers to achieve high sensitivity. These devices, however, require a high operation voltage and are not compatible with CMOS based read-out circuits (ROCs). In this work we demonstrate a solution-proceeded NIR phototransistor structure based on a bulk heterojunction (BHJ) of a narrow bandgap polymer, poly(N-alkyl diketopyrrolo-pyrrole dithienylthieno[3,2-b]thiophene) (DPP-DTT), and [6,6]-phenyl-C61-butyric acid methylester (PCBM). The device exhibits ultrahigh responsivity (∼5 × 10(5) A W(-1)) as well as wide tunability (>1 × 10(4)) of photoconductive gain. Using the current-voltage and transient photocurrent measurements we show that the high responsivity is due to the combined effects of fast transport of holes in the polymer matrix and slow detrapping of electrons from the isolated PCBM domains. The wide gain tunability and the efficient suppression of noise current are achieved through the use of the optically tunable gate terminal. We demonstrate that our phototransistor can be used as the detection unit in a photoplethysmography sensor for non-invasive, continuous finger pulse wave monitoring. The high-sensitivity of the phototransistor allows the use of a low-power light source, thus reducing the overall power consumption of the sensor. This, together with the solution processibility and the simple device configuration (which is compatible with conventional ROCs), make the phototransistor a very promising component for the next generation low-cost, mobile biomedical devices for health monitoring and remote diagnostics.

An ultra-stretchable and highly-sensitive strain sensor was reported, which can monitor pulse, electrocardiograph, breath, finger motions and emotion changes.

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The ability to detect near‐infrared and mid‐infrared radiation has spawned great interest in colloidal HgTe quantum dots (QDs). In contrast to the studies focused on extending the spectral range of HgTe QD devices, the temporal response, another figure of merit for photodetectors, is rarely investigated. In this work, a single layer, aqueous HgTe QD based photoconductor structure with very fast temporal response (up to 1 MHz 3 dB bandwidth) is demonstrated. The device is fabricated using a simple spray‐coating process and shows excellent stability in ambient conditions. The origin of the remarkably fast time response is investigated by combining light intensity‐dependent transient photocurrent, temperature‐dependent photocurrent, and field‐effect transistor (FET) measurements. The charge carrier mobility, as well as the energy levels and carrier lifetimes associated with the trap states in the QDs, are identified. The results suggest that the temporal response is dominated by a fast bimolecular recombination process under high light intensity and by a trap‐mediated recombination process at low light intensity. Interestingly, it was found that the gain and time response of aqueous HgTe QD‐based photoconductors can be tuned by controlling the QD size and surface chemistry, which provides a versatile approach to optimize the photodetectors with selectable sensitivity and operation bandwidth.