Owing to their practical applications, two‐dimensional semiconductor p–n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p–n junction diode is formed in tungsten diselenide (WSe2) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe2, and the formation of a junction near the edge contact, are verified by high‐resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 107 and 108. The diode can achieve extremely high mobility of up to 168 cm2 V−1 s−1 and a rectification ratio of 103. The ideality factor is 1.11 at a back gate voltage VG = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single‐channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light‐emitting diodes.
Two-dimensional (2D) atomic crystalline materials have attracted the scientific community owing to their remarkable electrical and optical applications, such as solar cells, light-emitting diodes, and photodiodes. This study demonstrates a Schottky barrier photodiode (SPD) using different metal architectures in lateral and vertical contacts on n-type 2H phase semiconducting molybdenum ditelluride (MoTe 2 ) synthesized by the self-flux crystal growth method. High-work-function palladium and low-work-function indium metals have been deposited on MoTe 2 to fabricate a field-effect transistor confirming diode characteristics. The device shows an ideality factor of 1.09 and a rectification ratio of 10 2 , indicating ideal diode characteristics based on a single MoTe 2 channel. In addition, we measured the device in the dark and used the green laser to analyze the photodiode behavior of SPD in a wide range of light intensity. A single channel using contact architecture-based study is helpful to apply in other 2D materials to achieve the simplest fundamental diodes for future nanoelectrical and optoelectronic devices.
The integration of electrical contact into 2D heterostructure is an essential approach to high-quality electronic nano-devices, especially field-effect transistors. However, high contact resistance with transition metal dichalcogenides such as molybdenum disulphide (MoS2)-based devices has been a significant fabrication impediment to their potential applications. Here, we have demonstrated the advantage of 1D indium metal contact with fully encapsulated MoS2 within hexagonal boron nitride. The electrical measurements of the device exhibit ambipolar transport with an on/off ratio of 10 2 for holes and 10 7 for electrons. The device exhibits high field-effect mobility of 40.7 cm 2 V − 1 s − 1 at liquid nitrogen temperature. Furthermore, we have also analysed the charge-transport mechanism at the interface and have calculated the Schottky barrier height from the temperature-dependent measurement. These results are highly promising for the use of air-sensitive material heterostructure and large-scale design of trending flexible, transparent electronic wearable devices.
Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs p-n diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications. In this study, we propose a facile and dopingfree approach based on the contact engineering of a few-layer tungsten di-selenide to form a lateral p-n homojunction photovoltaic. By combining surface and edge contacts for p-n diode fabrication, the photovoltaic effect is achieved with a high fill factor of ≈0.64, a power conversion efficiency of up to ≈4.5%, and the highest external quantum efficiency with a value of ≈67.6%. The photoresponsivity reaches 283 mA/W, indicating excellent photodiode performance. These results demonstrate that our technique has great potential for application in next-generation optoelectronic devices.
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