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The thermal stability and interfacial properties of amorphous ZrAlxSiyOz films prepared under high vacuum conditions by pulse-laser deposition are investigated. A high anticrystallization temperature of 916°C is identified by x-ray diffraction and differential scanning calorimeter. However, it is found that ZrOx clusters may precipitate from amorphous film matrix at a temperature as low as 700°C, which subsequently react with Si substrate to form amorphous Zr-silicide interfacial layer. Due to the conductivity and good interfacial morphology of amorphous Zr-silicide interfacial layer, the Pt∕ZrAlxSiyOz∕IL∕Si stack gate structures exhibit good electrical properties such as small equivalent oxide thickness of 0.9nm, flatband voltage of 0.43V, and low leakage density of 64mA∕cm2 at 1V gate voltage.