The exchange-coupling mechanism of Cr70Al30/Fe19Ni81 bilayer films was investigated in terms of the crystallographic orientation, the interface roughness, and the grain size. The exchange-coupling field Hex appears when the Cr70Al30 layer is thick enough to accommodate an antiferromagnetic domain wall. The value of Hex was found to increase with decreasing the grain size in association with the [110] orientation. This tendency can be explained by considering the exchange-coupling field evaluated from the random field approximation.
MgO/Cr 70 Al 30 /Fe 19 Ni 81 and ZnO/Cr70Al30/Fe19Ni81 layered films with different buffer layer thicknesses were prepared on (100)Si substrates in order to investigate the relationship among the exchange-coupling field, the grain size, and the lattice constant of the antiferromagnetic layer. The exchange-coupling field was found to consist of the intragrain exchange coupling and the intergrain coupling fields. The former field is inversely proportional to the product of the lattice constant and the grain size. The latter field is constant and changes its sign in association with the increase of the buffer layer thickness.
The MgOICr7oAl3QIFel9Nisl layered films with different MgO buffer layer thicknesses were prepared on (100) Si substrates in order to alter the grain size and the lattice constant of the antiferromagnetic layer. The exchange-coupling field was found to consist of the intra-grain intrinsic exchange-coupling field and the inter-grain exchagne-coupling field. The former field is inversely proportional to the product of the lattice constant and the grain size. The latter field changes its sign by changing the thickness of the MgO buffer layer.
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