We have developed a miniahlre and simple pre-distortion linearher module for Wide-band code division multiple access (WXDMA) base station power amplifer. Si-LDMOS FETs are widely used as 6nal stage for this application. In general, the same Si-LDMOS device has also been used as predhtnrter to cancel ditomon made at the limal stage. However, the circuits become eompler and larger in size. We took a different approach hy using InClP ABT based MMIC (monolithic-microwave integrated circuit) as predistorter and achieved a simple, compact prediitorter with ease of use. By using thii pre-distortion lineirizer module, we have demonstrated 15dB reduction of adjacent channel leakage power ratio (ACLR) on 8OOMIIr hand show a tendency ofbeing more complicated [I] [2], and it can't be controlled with easy algorithm due to increase of control terminals.Usually, in order to suppress ACLR by use of simple pre-distortion circuit, the same kind of devices bas been used hotb for the predistorter stage and the fml output stage.In this paper, a miniature and simple pre-distortion lmearizer module using InGaP HBT based MMIC for W-CDMA application is developed for the both frequency bands of 800MHz and 2.1GHz. ACLR can he improved significantly with this module when used with LDMOS. D. LINEARITY OF AMPLIFIER power for-this development. The first PA for 8 0 0 k band is a single stage-PA made of MOW LDMOS. The 45W LDMOS as a first-stage and 18OW LDMOS as a second stage. AM-AM and AM-PM characters were Index -Pre-distorHob second PA is a mo-stage PA for 2 . I G E hand, of AcL4w-cDMA9 Si-LDMoS FET3 Incap mT, MESFET
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