High quality thin-film transistors ͑TFTs͒ with hydrogenated amorphous silicon, a-Si:H, deposited by hot-wire chemical vapor deposition as the active layer at growth rates above 20 Å/s, have been prepared using a standard, low-temperature process on glass substrates. These TFTs show a switching ratio above 3ϫ10 6 , a threshold voltage of 6 V, a subthreshold slope of 1.7 V/decade, and a field effect mobility of 0.1 cm 2 V Ϫ1 s 1 .
Bottom-gate thin film transistors (TFT) were fabricated with amorphous and microcrystalline silicon active layers deposited by hot-wire (HW) chemical vapor deposition using different levels of hydrogen dilution. As the hydrogen dilution was increased above 80%, the active layer made a transition from amorphous to microcrystalline. This transition resulted in an increase of the TFT off-current and in an increase of the TFT subthreshold slope. The TFT on- current and the TFT mobility remained at levels comparable to those of the a-Si:H HW TFTs. A comparison is made between TFTs with amorphous and microcrystalline silicon active layers prepared both by rf glow discharge and HW. HW TFTs with an active layer consisting of a thin layer deposited with high hydrogen dilution underlying a thicker amorphous silicon layer are also compared to TFTs with an active layer of the same total active layer thickness consisting only of the high hydrogen dilution film.
High-quality thin film transistors (TFT) with hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire (HW) chemical vapor deposition as the active layer at growth rates above 20 Å/s are compared to TFTs with a-Si:H deposited by RF glow discharge at 1 Å/s. The subgap absorption measured by the constant photocurrent method and steady-state photoconductivity measured between source and drain are used to characterize the a-Si:H in the TFT. The activation energy of the dark conductivity is measured as a function of the gate voltage to obtain the position of the Fermi level. The effect of a bias stress on the TFT transfer curve is obtained.
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