In this paper, novel Al 2 O 3 /ZnO/Al 2 O 3 stack is suggested as the silicon passivation layer for the solar cell application. It is confirmed by the experiment that the amount of the negative fixed oxide charge can be controlled by inserting ZnO inter layer (IL), which is explained by accepter-like defect (V Zn , O i , and O Zn) formation from room temperature photo luminescence (RTPL) analysis. The effect of ZnO IL is investigated with varying the thickness of Al 2 O 3 bottom layer by the electrical and physical analysis. The effective lifetime measurement shows that the electronic recombination losses at the silicon surface are reduced effectively by optimizing the Al 2 O 3 /ZnO/Al 2 O 3 stack.
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