Atomic hydrogen irradiation leads to striking effects on the electronic properties of In x Ga 1Ϫx As 1Ϫy N y /GaAs single quantum wells as measured by photoluminescence spectroscopy. The In x Ga 1Ϫx As 1Ϫy N y band-gap energy blueshifts with increasing hydrogen dose and finally saturates at the value of a corresponding reference sample without nitrogen. The luminescence intensity decreases upon hydrogen irradiation with a strong dependence on nitrogen content. The above results have been found in a large set of samples differing for nitrogen and indium content, and are related to the formation of bonds between hydrogen and one or more nitrogen atoms.
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