The c-axis oriented barium ferrite thin films were prepared by radio frequency magnetron sputtering on silicon substrates with a metal underlayer Pt (111) as well as an oxide underlayer yttria stabilized zirconia (YSZ). Microstructural studies (scanning electron microscopy, atomic force microscopy, and magnetic force microscopy) showed that the magnetic grains in BaM film have a strong relationship with the grains in the underlayer. The Pt underlayer is more effective in forming micrometer-sized and multidomain magnetic grains, which have high saturation magnetization but small coercivity and remanence of the BaM film. On the contrary, the YSZ underlayer is favorable to obtain nanometer-sized and monodomain magnetic grains, which lead to a slight decrease in saturation magnetization but dramatically increase coercivity and remanence of the BaM film. Hence, with careful selection of underlayer, it is feasible to obtain suitable magnetic grain size and domain structure of BaM films to satisfy special requirements.
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