A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are πR = −1100×10 −11 Pa −1 and πC = −900×10 −11 Pa −1 respectively. These values should be compared with the usual bulk PZR in p-type silicon, πR = 70 × 10 −11 Pa −1 . The observations are well described using models of space charge limited electron and hole currents in the presence of fast electronic traps having stress-dependent capture (ωc) and emission rates. Under steady-state conditions (i.e. when ω ωc) where the impedance spectroscopy measurements yield results that are directly comparable with previously published reports of PZR in depleted, silicon nano-objects, the overall piezo-response is just the usual, bulk silicon PZR. Anomalous PZR is observed only under non-steady-state conditions when ω ≈ ωc, with a symmetry suggesting that the electro-mechanically active fast traps are native Pb0 interface defects. The observations suggest new functionalities for FD-SOI, and shed light on the debate over the PZR of carrier depleted nano-silicon.
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