Articles you may be interested inLow density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP (001) The role of arsine in the self-assembled growth of In As ∕ Ga As quantum dots by metal organic chemical vapor deposition An experimental approach has been developed to control the formation of InAs self-assembled islands. A lithographically defined mesa lattice on the surface was used to control the growth kinetics and island nucleation. Two distinct island formation regimes were observed from InAs islands grown on patterned GaAs ͑100͒ substrates. In the case of direct growth on patterned substrates, a type I islanding was observed, in which all the islands formed between mesas. Incorporating a stressor layer into the regrowth on the patterned substrate yielded a type island nucleation, where all the islands nucleated on top of the mesas. The possible mechanisms involved in the long range ordering and positioning of islands are discussed.
Wetting layer (WL) photoluminescence (PL) at 10 K dominated the PL spectra of low-density quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation.
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