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Sub-5nm all-around gate FinFETs with 3nm fin width were fabricated for the first time. The n-channel FinFET of sub-5nm with 1.4nm HfO 2 shows an I Dsat of 497µA/µm at V G =V D =1.0V. Characteristics of sub-5nm transistor are verified by using 3-D simulations as well as analytical models. A threshold voltage increases as the fin width reduces by quantum confinement effects. The threshold voltage shift was fitted to a theoretical model with consideration of the first-order perturbation theory. And a channel orientation effect, based on a current-flow direction, is shown. Key words: all-around gate, FinFET, sub-5nm, quantum effect Introduction Silicon-based transistors are scaled down continually in order to increase a density and speed. Multi-gate FinFETs have strengths of high robustness on short-channel effects (SCEs) and superior scalability using conventional processes [1][2][3][4][5][6][7]. However, the ultimate minimum feature-sized device operating at room temperature has been expected to be 1.5nm according to Heisenberg's uncertainty principle and Shannon-von NeumannLandauer expression [8]. The fabricated sub-5nm all-around gate (AAG) FinFET is approaching to this fundamental limit. FinFET [7]. For ultimately scaled transistor, AAG FinFET is known to be the best structure to provide scalability and flexibility in device design [9]. This work primarily focuses on feasibility and scalability of sub-5nm AAG FinFET. A threshold voltage shift by quantum confinement and an effect of current-flow direction are reported.Fabrications Fig. 1 illustrates a process flow of AAG FinFET. As a starting material, (100) SOI wafers were used. 100nm silicon film was thinned down to 14nm by using thermal oxidations and HF wet etch. Dual-resist process for a fin and a gate patterning was used to define nanometer features by e-beam lithography and non-critical large-area patterns by optical lithography. After the silicon-fin etch, a sacrificial oxide was grown and removed to alleviate etching damages. Gate dielectrics were split into 1.4nm HfO 2 by atomic layer deposition and 2nm thermal SiO 2 . Reasonable characteristics of sub-5nm devices were achieved in HfO 2 group. 30nm in-situ n + poly-silicon was deposited for the gate electrode. The gate was patterned by the dual-resist process, similarly. After the gate and spacer formation, arsenic ions were implanted to form the source and drain (S/D). 1000℃ spike annealing was utilized to activate the dopants of S/D. Finally, forming gas annealing at 450℃ was applied. Metallization was skipped for iterative annealing to optimize gate-to-S/D overlap. The fabricated device dimensions are sub-5nm gate length (L G ), averaged 3nm fin width (W Fin ), and 14nm fin height (H Fin ).Results and Discussions Fig. 2 shows a SEM top-view of 3nm silicon-fin and sub-5nm gate. Fig. 3 and Fig. 4 show TEM cross-sectional views of 3nm silicon-fin (a-a' direction of Fig. 6 and Fig. 7. An on-state current is 497µA/µm at V G =V D =1.0V in Fig. 6, which is normalized by allarounded channel perime...

A two-step strategy for coaxial electrospinning and postelectrospinning is an effective method for fabricating superfine nanofibers composed of highly swellable hydrogels. Alginate and poly(ε-caprolactone) [PCL] were coelectrospun via fibrous meshes with a coaxial nozzle; alginate at the core was subsequently cross-linked in calcium chloride solution. The PCL sheath was removed from the meshes by repeated organic-phase washing. The peeling process was monitored by scanning electron microscopy, transmission electron microscopy, and differential scanning calorimetry, and the complete removal of the PCL outer layers was confirmed by the thinning of the fiber volume. The obtained alginate hydronanofiber showed extreme water-swellability and mass erosion depending on the degree of cross-linking. We also measured the nanoscale and macroscale mechanical properties of a single nanofiber and of the whole mesh by atomic force microscopy and rheometry. Quantitative analysis of nanomechanical properties indicated that the hydronanofiber with higher cross-linking density had higher stiffness and Derjaguin-Müller-Toporov modulus. Cells laid on the mesh and the vertical infiltration distance were visualized and quantified by confocal laser scanning microscopy. Cells on the mesh with higher cross-linking density infiltrated deeply to the bottom of the mesh. Thus, hydrogel-like nanofibrous meshes are versatile matrices allowing for deep infiltration of cells throughout the mesh via manipulation of the mechanical properties of the nanofiber.

A dry-feeding entrained bed coal gasifier was numerically modelled by simultaneously solving the rate equations for chemical reactions of the solid and gas phases. This model describes simplified physical and chemical processes in the entrained bed coal gasifier. Chemical reaction processes for coal gasification and combustion are considered along with the simplified gas flow passage in the reactor, so that progress of reactions at the designated spatial location is represented. Gasification phenomena of coal particles were separated into devolatilization, gas-phase, and solid-phase reactions. Coal gasifier geometry was simplified to a pseudo-two-dimensional (pseudo-2D) reactor model based on the 1D plug flow concept. The dimension in the pseudo-2D model was conceptually divided by considering the recirculation effect. As a result, carbon conversion, cold gas efficiency, and temperature distribution were obtained at variable oxygen to coal mass ratio, steam to coal mass ratio, and operating pressure. Operating conditions could be appropriately controlled by knowing the degree of reaction in the reactor.

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