This paper summarizes the results on inkjet printing and characterization of functional structures on molded 2D and 3D devices. Different injection molded thermoplastics, a transfer molded thermoset and polyimide foil as substrate materials were used. Conductive structures were obtained by inkjet printing of a commercial available silver nanoparticle ink. The use of printable acrylic based ink enabled the fabrication of conductor crossovers or multilayers. Results on inkjet printed temperature sensitive structures and an inkjet printed intrusion sensor device as well as an inkjet printed electrical interconnect on a transfer molded package will be presented.
A Silicon-On-Insulator (Sol) CMOS technology has been developed for microwave applications up to 5 GHz. The technology is based on a manufactorable, near-fullydepleted 0.8 um CMOS -VLSltechnology with very high resistivity SlMOX substrate, typically > 10 mcm. The thicknesses of gate oxide, silicon film and buried oxide are 10 ram, 100 nm and 400 nm, respectively. A TiSi2 self-aligned silicide formation is used to lower the resistance of the gate and source/drain regions. The process is completed with a two-level AIS metallization featuring TiN-barrier, tungsten plug and stacked contacts and vias. Barrier, tungsten plug and metallization reinforce the polycide gates for the RF transistors to further reduce the gate resistance.
A new condenser microphone with a 300 nm thick monocrystalline silicon and silicon nitride sandwich diaphragm and an aluminum backplate fabricated using a sacrificial resist layer, is presented and tested. Microphones with diaphragm side lengths of 200 to 476 pm show a flat frequency response between 50 HZ and 20 kHz and sensitivities up to 0,35 mVPa at a bias voltage of 2V. The microphones can be fabricated on a single wafer without bonding techniques. The technology is suitable for integration of a CMOS signal processing electronic circuit.
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