Titanium nitride thin film was deposited on a silicon wafer by the Atomic Layer Deposition (ALD) method using TiCl 4 and NH 3 as source chemicals. Nitrogen gas was used for carrying the TiCl 4 and purging the reactants. The gases were introduced into the reaction chamber in the sequence of TiCl 4 -N 2 -NH 3 -N 2 for the saturated surface reaction on the wafer. TiN film was grown with [100] preferred orientation at 350 o C, while with [111] preferred orientation at 450 o C and higher temperatures. The deposition rate was constant as 0.17 Å/ cycle irrespective of deposition temperature, which demonstrates TiN film was grown by the ALD growth mechanism. TiN thin films grown at a temperature higher than 450 o C with thickness of 320 Å showed electrical resistivity as low as 72×10 −6 Ωcm.