The interfacial energy of interconnect-metal/barrier-metal interfaces in ultralarge-scale integrations have been investigated numerically by assuming a simple additive interaction potential within a rigid-lattice approximation. The calculation gave some noteworthy results: Al prefers the (111) orientation on a TiN(111) plane, but Cu did not have such a strong preference. Al(111) can be expected to show strong epitaxial growth on VNx(111), as did Cu on Nb(110). On the basis of the calculations, a Cu/Nb bilayered structure was sputter deposited sequentially by dc magnetron sputtering and examined for crystalline orientation by x-ray-diffraction analysis. Cu exhibited strong (111) orientation preference, and a narrow full width at half-maximum in (111) rocking angle around the substrate normal.
Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication Low resistance polysilicon interconnects with selfaligned metal
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