This paper reports on novel electron transport materials, 1,3,5-triazine derivatives (TRZ),
which have been useful in high-efficiency electrophosphorescent (EP) organic light-emitting
diodes (OLEDs). We synthesized four 2,4,6-tris(diarylamino)-1,3,5-triazine derivatives
(TRZ1−TRZ4) that had electron-donating substituents and examined their OLED characteristics. Of these, we found that TRZ 2, 3, and 4 function as a host for tris(2-phenylpyridine)iridium (Ir(ppy)3) and, in particular, 2,4,6-tris(carbazolo)-1,3,5-triazine (TRZ2) demonstrated
a very high external electroluminescent (EL) quantum efficiency (ηext) of ∼10.2 ± 1.0% and
an energy conversion efficiency (ηenergy) of 14.0 ± 2.0 lm/W. Detailed transient photoluminescent (PL) measurement revealed that the triplet energy level of TRZ2 (E
T1 = 2.81 eV) is
higher than that of conventional 4,4‘-N,N‘-dicarbazol-biphenyl (CBP) (E
T1 = 2.56 eV),
suggesting that TRZ2 has excellent capabilities in confining Ir(ppy)3 triplet excitons.
A rapid optical absorption change is observed in a GaAs/AlAs short-period superlattice having Wannier–Stark localization. This phenomenon is clearly explained by a rapid collapse of Wannier–Stark localization due to electric field screening by photogenerated space charges. The screening causes a positive feedback loop between restoration of the blue-shifted wavelength of the absorption band-edge towards the red and an increase in optical absorption, which causes an additional field screening. The experimental bias voltage dependence of the intensity of photoluminescence and photocurrent under high optical excitation, agree well with a model applying Fowler–Nordheim tunneling at the heterointerface cladding layer. It is concluded that the space charges are stopped near the cladding layer and that the superlattice region is almost fully screened to near the flat-band bias condition.
Unstrained InGaAs (4.5 nm)/InAlAs (1.0 nm) short-period superlattices grown on a (100) GaAs substrate were studied. To achieve this growth, an In-composition-graded buffer layer and a thick InGaAs buffer layer were adopted. Structural properties were investigated by x-ray diffraction, atomic force microscopy, and a compositional analysis by the thickness fringe method. X-ray diffraction patterns showed clear periodicity in the superlattices and atomic force spectroscopy images showed cross-hatch morphology for the main ridge along the (011̄) direction. Clear thickness fringes in the bright-field electron microscope images for the superlattice region and ambiguous fringes for the graded buffer layer indicate that misfit dislocation due to lattice mismatch concentrates in the graded buffer and a high-quality superlattice is successfully grown in spite of the large lattice mismatch between the superlattice and the substrate. Optical characteristics measured by photocurrent spectroscopy reveal a clear Wannier–Stark localization effect at room temperature. The experimental absorption energies agree well with calculated values by a transfer matrix method using parameters for bulk InGaAs and InAlAs.
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