Assembled Fe3O4 nanoparticles on graphene for enhanced electromagnetic wave losses Appl. Phys. Lett. 101, 153108 (2012) Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd]4/Au/[Co/Pd]2 nanowires J. Appl. Phys. 112, 073902 (2012) Electric-field control of CoFeB/IrMn exchange bias system J. Appl. Phys. 112, 064120 (2012) Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in threeterminal geometry Appl. Phys. Lett. 101, 132411 (2012) Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by halfmetallicity of Co2MnSi and coherent tunneling

Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are distributed over a logic-circuit plane, is expected to realize both ultra-low-power and reduced interconnection delay. We have fabricated a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions (MTJs) in combination with metal oxide semiconductor (MOS) transistors. Magnesium oxide (MgO) barrier MTJs are used to take advantage of their high tunnel magneto-resistance (TMR) ratio and spin-injection write capability. The MOS transistors are fabricated using a 0.18 µm complementary metal oxide semiconductor (CMOS) process. The basic operation of the full adder is confirmed.

Reduced levels of D-serine may play a role in the pathophysiology of schizophrenia, and serum D- and L-serine levels might provide a measurable biological marker for schizophrenia.

The authors studied an effect of ferromagnetic (Co 20 Fe 60 B 20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at annealing temperature (T a ) of 200 o C and then decreased rapidly at T a over 250 o C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture resulting from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350 o C just after depositing bottom CoFe/Pd multilayer showed TMR ratio of 78% by post annealing at T a =200°C.