Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Matsunaga, Satoru; Hayakawa, Jun; Ikeda, Shoji; Miura, Katsuya; Hasegawa, H.; Endoh, Tetsuo; Ohno, Hideo; Hanyu, Takahiro

doi:10.1143/apex.1.091301

Cited by 323 publications

(174 citation statements)

References 23 publications

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“…Owing to their small size (∼ 10 nm) and large velocities (∼ 100 m/s) 9,10 , controllable domain wall motion represents holds real potential for tailoring functional devices with fast writing speeds. In addition, there has been several proposals [11][12][13][14] related to magnetic memory functionality due to the non-volatile nature of magnetic domains. Walker breakdown 15 is nevertheless a The spin-orbit interaction may be either intrinsic or induced via a heavy metal proximate host.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Linder

Alidoust

2013

Phys. Rev. B

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We study the motion of several types of domain wall profiles in spin-orbit coupled magnetic nanowires and also the influence of spin-orbit interaction on the ferromagnetic resonance of uniform magnetic films. Whereas domain wall motion in systems without correlations between spin-space and real-space is not sensitive to the precise magnetization texture of the domain wall, spin-orbit interactions break the equivalence between such textures due to the coupling between the momentum and spin of the electrons. In particular, we extend previous studies by fully considering not only the field-like contribution from the spin-orbit torque, but also the recently derived Slonczewski-like spin-orbit torque. We show that the latter interaction affects both the domain wall velocity and the Walker breakdown threshold non-trivially, which suggests that it should be accounted in experimental data analysis. We find that the presence of multiple spin-orbit torques may render the Walker breakdown to be universal in the sense that the threshold is completely independent on the material-dependent Gilbert damping α, non-adiabaticity β, and the chirality σ of the domain wall. We also find that domain wall motion against the current injection is sustained in the presence of multiple spin-orbit torques and that the wall profile will determine the qualitative influence of these different types of torques (e.g. field-like and Slonczewski-like). In addition, we consider a uniform ferromagnetic layer under a current bias, and find that the resonance frequency becomes asymmetric against the current direction in the presence of Slonczewski-like spin-orbit coupling. This is in contrast with those cases where such an interaction is absent, where the frequency is found to be symmetric with respect to the current direction. This finding shows that spin-orbit interactions may offer additional control over pumped and absorbed energy in a ferromagnetic resonance setup by manipulating the injected current direction.

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Section: Introductionmentioning

confidence: 99%

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Linder

Alidoust

2013

Phys. Rev. B

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“…There have been several proposals for utilizing MTJs in computational circuits either as the main core of the computation [2][3][4] or as a temporary storage element that can hold information, which is called memory-in-logic. [5][6][7] Figure 2a shows an example of a computational circuit that utilizes an MTJ for its operation and fan out.…”

Section: Computing With Spins and Magnets Using Transistors Or Cmentioning

confidence: 99%

“…From this perspective, two categories for spin-based logic exist. In one category, logic is performed in conjunction with transistors and/or clocks [2][3][4][5][6][7][8] to provide gain and/or directionality. In the other case, such effects are built into spin devices.…”

Section: Introductionmentioning

confidence: 99%

Computing with spins and magnets

2014

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Abstract:The possible use of spin and magnets in place of charge and capacitors to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

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“…[1][2][3][4][5][6][7][8][9] While standby power is dramatically reduced because of non-volatility of MTJs, the writing energy utilizing STT is at best sub-pJ/bit which is still larger than their semiconductor memory counterparts. [10][11][12] One of the alternative low power writing schemes in MTJs is by means of voltage controlled magnetic anisotropy (VCMA). [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] Write energies as low as 6 fJ/bit has been demonstrated using this scheme.…”

Section: Introductionmentioning

confidence: 99%

Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions

2017

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We report a comprehensive study on the role of the free layer thickness (tF) in electric-field controlled nanoscale perpendicular magnetic tunnel junctions (MTJs), comprising of free layer structure Ta/Co40Fe40B20/MgO, by using dc magnetoresistance and ultra-short magnetization switching measurements. Focusing on MTJs that exhibits positive effective device anisotropy (Keff), we observe that both the voltage-controlled magnetic anisotropy (ξ) and voltage modulation of coercivity show strong dependence on tF. We found that ξ varies dramatically and unexpectedly from ∼−3 fJ/V-m to ∼−41 fJ/V-m with increasing tF. We discuss the possibilities of electric-field tuning of the effective surface anisotropy term, KS as well as an additional interfacial magnetoelastic anisotropy term, K3 that scales with 1/tF2. Voltage pulse induced 180° magnetization reversal is also demonstrated in our MTJs. Unipolar switching and oscillatory function of switching probability vs. pulse duration can be observed at higher tF, and agrees well with the two key device parameters — Keff and ξ.

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Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Cited by 323 publications

References 23 publications

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Asymmetric ferromagnetic resonance, universal Walker breakdown, and counterflow domain wall motion in the presence of multiple spin-orbit torques

Computing with spins and magnets

Role of CoFeB thickness in electric field controlled sub-100 nm sized magnetic tunnel junctions

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