We have used a “leaky tube” diffusion system to carry out tin diffusion in p‐type
normalGaAs
substrates in an attempt to produce n‐p junctions with a low temperature processing technique. Solid
normalSnS
was used as the source for the tin, and the diffusions were carried out in the temperature range 650°–750°C for times varying from 2 to 24h. Both secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS) showed that tin had been introduced into the substrates in concentrations as high as
3.3E+19 cm−3
and to depths as large as 2 μm. However, electrochemical carrier concentration profiling revealed that the diffused region remained p‐type with net carrier concentration barely altered by the diffusion process. The reason for this anomalous behavior is not understood, but pairing or some other compensation may be taking place.
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