Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. The purpose of this Topical Review is to outline the operating principles of these versatile lasers and summarize the capabilities of devices that have been demonstrated so far. Particular attention is paid to the generation of near-transform-limited sub-picosecond pulses in passively mode-locked surface-emitting lasers, which are potentially of interest as compact sources of ultrashort pulses at high average power that can be operated readily at repetition rates of many gigahertz.
Picosecond pulses at gigahertz repetition rates from two different passively mode-locked VECSELs are amplified to high powers in cascaded ytterbium doped fiber amplifiers. Small differences in pulse durations between the two VECSELs led to amplification in different nonlinear regimes. The shorter 0.5 ps pulses could be amplified to 53 W of average power in the parabolic pulse regime. This was confirmed by excellent pulse compression down to 110 fs. The VECSEL producing longer 4.6 ps pulses was amplified in an SPM dominated regime up to 200 W of average power but with poor recompressed pulse quality.
A red-wavelength semiconductor disk laser (SDL) optically pumped by gallium nitride laser diodes is reported. This is believed to be the first demonstration of a directly diode-pumped visible wavelength SDL. In this initial demonstration, pump-power-limited continuous-wave output power up to 12.2 mW was achieved around room temperature in a single transverse mode with 2 output coupling. Insertion of an intracavity birefringent filter allowed tuning of the output over 11 nm around a centre wavelength of 672 nm
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