The total and partial electron collisional ionization cross sections for CH4, C2H6, SiH4, and Si2H6 have been measured for electron energies from threshold to 300 eV. Comparisons are made to earlier measurements.

No abstract

Atomic layer deposition (ALD) processes for HfO2 and HfxSi1−xO2 high-k dielectric thin films using liquid precursors and ozone were evaluated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) precursor provides HfO2 films with superior quality as compared to Hf(t-butoxide)4 precursor in terms of deposition rate, purity, and electrical properties of the films. ALD processes for hafnium silicate films have been developed by co-injection of TEMAHf and tetrakis(ethylmethylamino) silicon precursors. Alternating pulses of the Hf/Si precursor vapor mixture and ozone allow process temperatures below 400 °C to grow HfxSi1−xO2 film. The Hf and Si precursors can be converted to vapor for delivery to the deposition chamber either by bubbling an inert carrier gas separately through each liquid or by using a liquid vaporization unit. The co-injection process enables the formation of homogeneous single-layer hafnium silicate films as deposited.

SiHn radical densities at the surface of discharges in Ar-SiH4 mixtures have been measured by low-energy, electron-collisional ionization and mass spectrometer detection of SiH+n. The principal radical seen at the substrate surface of a dc proximity discharge is SiH3.